霍尔效应测量

Features

Multi-points measurement and Mapping display-2-D map / 3-D map- graphic display-Multipoint pattern measurement is programmed (maximum 1225 points) and random pattern is programmable by operator.
Film thickness conversion function from sheet resistance
Measurement data base link with Excel via CSV format file
Software language can be switched in English / Japanese by operator
Complies with the following ASTM & JISJIS H 0602-1995, JIS K 7194-1994ASTM F 84-99(SEMI MF84),ASTM F 374-00a, ASTM F 390-11,ASTM F 1529-97

Semiconductor materilas, Solar-cell materials (Silicon, Polysilicon, SiCetc)
New materials, functional materials (Carbon nanotube, DLC, graphene, Ag nanowire etc)
Conductive thin film (Metal, ITO etc)
Diffused sample (or layer)
Silicon-related epitaxial materials, Ion-implantation sample

Multi-points measurement and Mapping display-2-D map / 3-D map- graphic display-Multipoint pattern measurement is programmed (maximum 1225 points) and random pattern is programmable by operator.
Film thickness conversion function from sheet resistance
Measurement data base link with Excel via CSV format file
Software language can be switched in English / Japanese by operator
Complies with the following ASTM & JISJIS H 0602-1995, JIS K 7194-1994ASTM F 84-99(SEMI MF84),ASTM F 374-00a, ASTM F 390-11,ASTM F 1529-97

Semiconductor materilas, Solar-cell materials (Silicon, Polysilicon, SiCetc)
New materials, functional materials (Carbon nanotube, DLC, graphene, Ag nanowire etc)
Conductive thin film (Metal, ITO etc)
Diffused sample (or layer)
Silicon-related epitaxial materials, Ion-implantation sample

核心提示：3D-SIC技术的开发要求更加精细的背面加工，其复杂性和工艺要求不断增加。作为关键的工艺实现步骤之一，晶圆背面减薄也必须向

核心提示：3D-SIC技术的开发要求更加精细的背面加工，其复杂性和工艺要求不断增加。作为关键的工艺实现步骤之一，晶圆背面减薄也必须向